In neither case is the device "repairing" a failure like the ones posited here, though. Storage devices "repair" failures by detecting them and recovering the data using some form of ECC, and then rewriting it to a location that has not failed.
No one has yet figured out a way to have a shorted polysilicon feature un-short itself in situ. :)
No one has yet figured out a way to have a shorted polysilicon feature un-short itself in situ. :)