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SRAM cells need 6 transistors. DRAM cells need a transistor and a capacitor.

6 transistors aren't dense, so are capacitors in integrated circuits. Comparatively with NAND, it only needs one (floating gate) transistor.

Samsung is working on 3D-stacked DRAM cells: https://www.i-micronews.com/samsung-electronics-gearing-up-t...




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